| PART |
Description |
Maker |
| BB731 |
Silicon epitaxial planar capacitance diodes with very wide effective capacitance
|
TY Semiconductor Co., Ltd
|
| BB641 Q62702-B792 SIEMENSAG-Q62702-B792 |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance)
From old datasheet system
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| BB515 Q62702-B607 |
Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PO72-P-1.5C-1A PCN10F PO51-J-1.5 PO51J-T-1 PO51J-T |
Mica Film Capacitor; Capacitance:27pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V RFCO同轴连接
RFCO-AXIAL CONNECTORS RFCO同轴连接
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| Z8L18008FEC Z8L18008VEC Z8L18008PEC Z8L18010FSC Z8 |
Microprocessor Unit
Z8018x Family MPU
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:10uF; Capacitance Tolerance: /- 20%; ESR:2.2ohm; Leaded Process Compatible:Yes; Operating Temp. Max:105 C RoHS Compliant: Yes
CONN RING INSUL 26-24 AWG #8
CONN RING INSUL 26-24 AWG #6
CONN RING INSUL 26-24 AWG #2 8-BIT, MICROPROCESSOR, PDIP64
ENHANCED Z180 MICROPROCESSOR
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:6.8uF; Capacitance
dielectric type:Niobium Oxide; Case style:P; Depth, external:1.5mm; Length / Height, RoHS Compliant: Yes
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:15uF; Capacitance
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:4.7uF; Capacitance
|
ZILOG INC
Zilog Inc.
Zilog.
ZiLOG, Inc.
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
From old datasheet system
|
Leshan Radio Company, Ltd.
ONSEMI[ON Semiconductor]
|
| BB664 Q62702-B0909 Q62702-B0908 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) 硅变容二极管（甚高频电视信号接收器高电容率低串联电感低串联电阻）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SA57031-XX SA57031-25 SA57031-26 SA57031-31 SA5703 |
Micropower 150 mA, low-noise, low dropout linear regulator with on/off 微功耗为150 mA，低噪声，低压差线性稳压器的开/
RECTIFIER BRIDGE 25A 800V 300A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY
CAP CERAMIC MONO .1UF 50V 10%
Ceramic Multilayer Capacitor; Capacitance:22pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:1.2pF; Capacitance Tolerance: 0.5pF; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0603; Termination:SMD RoHS Compliant: Yes
Ceramic Multilayer Capacitor; Capacitance:1.5pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
Ceramic Multilayer Capacitor; Capacitance:1pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
|
TE Connectivity, Ltd.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| G8605-25 G8605 G8605-11 G8605-12 G8605-13 G8605-15 |
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 420V; Case Size: 30x40 mm; Packaging: Bulk 铟镓砷PIN光电二极
Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 25x35 mm; Packaging: Bulk 铟镓砷PIN光电二极
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 420V; Case Size: 35x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 420V; Case Size: 30x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 420V; Case Size: 35x30 mm; Packaging: Bulk
InGaAs PIN photodiode
|
Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
|
